Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

Author

Barlage, D.W. ; Heins, M.S. ; Mu, J.H. ; Fresina, M.T. ; Ahmari, D.K. ; Hartman, Q.J. ; Stillman, G.E. ; Feng, Ming

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

511

Lastpage

514

Abstract

The noise parameters of Npn InGaP/GaAs HBT devices are reported for an array of bias conditions from 2-18 GHz. A minimum noise figure of 0.8 dB with associated gain of 16 dB at 2 GHz was achieved at a collector bias of 0.83 mA and a collector-emitter voltage of 2 V. This was achieved by a device with emitter area of 3×10 μm². A model is also presented that is used to compare measured and theoretical results. The low power consumption, high associated gain, low equivalent noise resistance, and variable optimum noise match coupled with an excellent degree of linearity makes the InGaP/GaAs HBT an ideal candidate for low noise amplifiers (2-6 GHz) with minimal power consumption

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device noise; 2 to 18 GHz; HBT; InGaP-GaAs; collector bias; collector-emitter voltage; equivalent noise resistance; minimum noise figure; optimum noise match; ow noise amplifiers; power consumption; ultra low power noise performance; Electrical resistance measurement; Energy consumption; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; Low-noise amplifiers; Noise figure; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711728

Filename

711728