• DocumentCode
    2751187
  • Title

    Surface acoustic waves in c-axis inclined ZnO films

  • Author

    Carlotti, G. ; Fioretto, D. ; Socino, G. ; Palmieri, L. ; Petri, A. ; Verona, E.

  • Author_Institution
    Dipartimento di Fisica, Perugia Univ., Italy
  • fYear
    1990
  • fDate
    4-7 Dec 1990
  • Firstpage
    449
  • Abstract
    Surface acoustic wave propagation in c-axis inclined ZnO films has been studied in order to assess the possibility of using films of this kind in shear horizontal (SH) wave devices. The authors calculate the velocity dispersion and the electromechanical coupling coefficient for generalized Rayleigh and Love modes propagating along inclined-axis ZnO films on fused quartz and silicon substrates. The analysis has been done for different values of the inclination angle and of the ratio between film thickness and acoustic wavelength. ZnO films with the c-axis oriented 30° to the surface normal were deposited by reactive RF magnetron sputtering on fused quartz. Measurements of phase velocity of surface modes by ultrasonic and Brillouin scattering techniques permitted the elastic characterization of the films
  • Keywords
    Brillouin spectra; II-VI semiconductors; Love waves; Rayleigh waves; elastic constants; piezoelectric semiconductors; semiconductor thin films; sputtered coatings; surface acoustic waves; ultrasonic dispersion; ultrasonic velocity; zinc compounds; Brillouin scattering; Love modes; Rayleigh modes; SAW propagation; Si substrate; SiO2 substrate; ZnO films; c-axis inclined films; elastic characterization; electromechanical coupling coefficient; fused quartz; inclination angle; reactive RF magnetron sputtering; shear horizontal wave devices; surface mode phase velocity; velocity dispersion; Acoustic devices; Acoustic propagation; Acoustic waves; Magnetic analysis; Semiconductor films; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
  • Conference_Location
    Honolulu, HI
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1990.171406
  • Filename
    171406