DHBT/RTD-based active frequency multiplier for wireless communications

Author

De Los Santos, Hector J. ; Chui, Kelvin ; Chow, David H. ; Dunlap, Howard L.

Author_Institution

Hughes Space & Commun. Co., Los Angeles, CA, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

515

Lastpage

518

Abstract

We present, for the first time, measured data pertaining the microwave performance and characterization of a X6 (127->762 MHz) active frequency multiplier (FM), based on AIInAs/GaInAs/InP double heterostructure bipolar transistor (DHBT) and AlAs/InGaAs resonant tunneling diode (RTD) active devices. At +23°C and a nominal input power of -3 dBm, the X6 DHBT/RTD multiplier exhibits a conversion gain of +1 dB, a power dissipation of 22 mW, a dc efficiency of 3%, and an overall 0 to 60°C output power variation of 0.7 dB. The rich output harmonic content makes the DHBT/RTD combination a prime candidate for high-order multiplication applications

Keywords

III-V semiconductors; UHF bipolar transistors; UHF diodes; UHF frequency convertors; aluminium compounds; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; indium compounds; resonant tunnelling diodes; 0 to 60 degC; 127 to 762 MHz; 22 mW; 23 degC; 3 percent; AlInAs-GaInAs-InP; DC efficiency; active frequency multiplier; conversion gain; double heterostructure bipolar transistor; high-order multiplication; microwave performance; output harmonic content; output power; power dissipation; resonant tunneling diode; wireless communications; Bipolar transistors; Diodes; Frequency measurement; Gain measurement; Indium gallium arsenide; Indium phosphide; Microwave devices; Microwave measurements; Resonant tunneling devices; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711729

Filename

711729