Title :
Ferroelectric thin film ultrasonic micromotors
Author :
Udayakumar, K.R. ; Bart, S.F. ; Flynn, A.M. ; Chen, J. ; Tavrow, L.S. ; Cross, L.E. ; Brooks, R.A. ; Ehrlich, D.J.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fDate :
30 Jan-2 Feb 1991
Abstract :
Ferroelectric thin films of lead zirconate titanate (PZT) of morphotropic phase-boundary composition have been fabricated by a sol-gel spin-on technique for application to a new family of flexure-wave piezoelectric micromotors characterized by low speed and high torque. The high relative dielectric constant (1300) and breakdown strength (1 MV/cm) of the films lead to high stored energy densities. The piezoelectric coefficients d33 and d 31 were measured to be 220 pC/N and -88 pC/N, respectively; the electromechanical coupling factors calculated from these data were k33=0.49, k31=0.22, and k p=0.32. The development of the piezoelectric ultrasonic micromotors from the PZT thin films and the architecture of the stator structure are described. Nonoptimized prototype micromotors show rotational velocities of 100-300 rpm and net normalized torques in the pN-m/V2 range
Keywords :
ferroelectric thin films; micromechanical devices; piezoelectric motors; small electric machines; sol-gel processing; PZT thin films; PbZrO3TiO3; breakdown strength; electromechanical coupling factors; flexure-wave piezoelectric micromotors; morphotropic phase-boundary composition; net normalized torques; piezoelectric coefficients; relative dielectric constant; rotational velocities; sol-gel spin-on technique; speed; stator structure; stored energy densities; torque; ultrasonic micromotors; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Ferroelectric materials; High-K gate dielectrics; Micromotors; Piezoelectric films; Titanium compounds; Torque; Transistors;
Conference_Titel :
Micro Electro Mechanical Systems, 1991, MEMS '91, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Nara
Print_ISBN :
0-87942-641-1
DOI :
10.1109/MEMSYS.1991.114779