The reduction of dumping factor at well-in-well quantum well lasers

Author

Higa, Yasutaka ; Sorimachi, Mikio ; Nishinome, Takuya ; Iwasaki, Hajime ; Matsutani, Akihiro ; Miyamoto, Tomoyuki

Author_Institution

Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2011

fDate

9-13 Oct. 2011

Firstpage

680

Lastpage

681

Abstract

A quantum well design for controlling of the carrier relaxation process and reducing of the gain damping effect was investigated for improvement of high speed direct modulation semiconductor lasers. The proposed Well-in-Well structure decreases the carrier relaxation time into an active well by carefully designed wave function which relates to the LO phonon scattering rate. The decrease of relaxation time and the increase of modulation bandwidth was analyzed numerically. The reduction of damping factor γ was also demonstrated by experimental measurement of the relative intensity noise spectrum.

Keywords

carrier relaxation time; laser noise; optical modulation; quantum well lasers; wave functions; LO phonon scattering rate; carrier relaxation time; dumping factor; gain damping effect; high speed direct modulation; modulation bandwidth; relative intensity noise spectrum; semiconductor lasers; wave function; well-in-well quantum well lasers; Bandwidth; Damping; Laser noise; Laser theory; Measurement by laser beam; Modulation; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (PHO), 2011 IEEE

Conference_Location

Arlington, VA

Print_ISBN

978-1-4244-8940-4

Type

conf

DOI

10.1109/PHO.2011.6110732

Filename

6110732