DocumentCode
2751498
Title
Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures
Author
Shima, M. ; Sakuma, Y. ; Wirner, C. ; Strutz, T. ; Taguchi, E. ; Futatsugi, T. ; Awano, Y. ; Yokoyama, N.
Author_Institution
Fujitsu Ltd., Atsugi, Japan
fYear
1997
fDate
8-11 Sep 1997
Firstpage
539
Lastpage
542
Abstract
We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states
Keywords
resonant tunnelling; semiconductor quantum dots; I-V characteristics; electron transport; fine structure; low bias region; negative differential resistances; resonant tunneling; stacked double quantum dot structures; tetrahedral-shaped recess; Electrons; Etching; Fabrication; Gallium arsenide; Indium; Ohmic contacts; Quantum dots; Reproducibility of results; Resonant tunneling devices; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711734
Filename
711734
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