Title :
Electronic states in quantum dots: effects of symmetry of the confining potential
Author :
Ezaki, T. ; Sugimoto, Y. ; Mori, N. ; Hamaguchi, C.
Author_Institution :
Dept. of Electron. Eng., Osaka Univ., Japan
Abstract :
N-electron eigenstates in circular, elliptic, and triangular shaped quantum dots (QDs) are calculated by numerically diagonalizing the N-particle Hamiltonian. In a circular QD, the addition energy exhibits large values for N=2 and 6 due to the complete shell filling, and shows slightly large values for N=4 and 9 which corresponds to a spin-polarized half filling shell structure with the total spin of S=h (spin-triplet state) and S=3h/2 (spin-quadruplet state), respectively. In elliptic QDs, the degeneracy of the single-particle states is removed, resulting in a transition of the ground state from the spin-polarized half filling configuration to the spin singlet state for a QD containing four electrons. The states with 3, 6, and 9 electrons in a triangular QD are found to be slightly more stable compared to a circular QD, which is interpreted in terms of a geometrical effect
Keywords :
III-V semiconductors; aluminium compounds; electronic structure; gallium arsenide; indium compounds; semiconductor quantum dots; InGaAs-AlGaAs; N-electron eigenstates; N-particle Hamiltonian; circular dots; complete shell filling; confining potential symmetry; elliptic dots; geometrical effect; quantum dots; spin-polarized half filling shell structure; spin-quadruplet state; spin-triplet state; triangular dots; Electrons; Energy states; Equations; Filling; Potential well; Power engineering and energy; Quantum dots; Stationary state; Structural shells; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711735