Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers

Author

Bimberg, D. ; Ledentsov, N.N. ; Grundmann, M. ; Heinrichsdorff, F. ; Ustinov, V.M. ; Kopev, P.S. ; Alferov, Zh.I. ; Lott, J.A.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

547

Lastpage

552

Abstract

Quantum dot (QD) edge emitting and vertical cavity lasers are realized using a self-organized growth approach. Threshold current densities at room temperature (RT) of about 60 A/cm² for edge emitting and 170 A/cm² for vertical cavity lasers are measured. High internal (>96%) and differential (70%) efficiencies are obtained for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation is demonstrated. QD lasers exhibit much larger gain, differential gain and smaller linewidth enhancement factor as compared to conventional quantum well devices

Keywords

III-V semiconductors; current density; indium compounds; self-assembly; semiconductor lasers; semiconductor quantum dots; surface emitting lasers; 1 W; 293 K; Fabry-Perot laser; InAs; InGaAs-AlGaAs; differential gain; edge emitting lasers; linewidth enhancement factor; self-organized growth; surface emitting quantum dot lasers; threshold current density; Current measurement; Density measurement; Fabry-Perot; Quantum dot lasers; Quantum dots; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711736

Filename

711736