DocumentCode
2751593
Title
Epitaxially regrown gaas based photonic crystal surface emitting laser
Author
Williams, D.M. ; Groom, K.M. ; Stevens, B.J. ; Jiang, Q. ; Childs, D.T.D. ; Taylor, R.J. ; Khamas, S. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Y.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
705
Lastpage
706
Abstract
An epitaxial regrowth process is used to realise photonic crystal surface emitting lasers emitting at 980nm. We optimise the growth process for void-free infill and demonstrate laser operation via coupling to photonic crystal bands.
Keywords
III-V semiconductors; epitaxial growth; gallium arsenide; laser beams; photonic crystals; surface emitting lasers; epitaxially regrown; laser operation; photonic crystal bands; photonic crystal surface emitting laser; void free infill; wavelength 980 nm; Couplings; Epitaxial growth; Gallium arsenide; Gratings; Lattices; Photonic crystals; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110745
Filename
6110745
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