DocumentCode :
2751609
Title :
Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors
Author :
Sugihwo, F. ; Lin, C.-C. ; Bouteiller, J.-C. ; Larson, M. ; Harris, J.S., Jr.
Author_Institution :
Solid State Lab., Stanford Univ., CA, USA
fYear :
1997
fDate :
8-11 Sep 1997
Firstpage :
561
Lastpage :
564
Abstract :
Micromachined tunable VCSELs are particularly useful for wavelength division multiplexing applications because of their large continuous wavelength tuning range without mode-hopping. We have achieved 26 nm single mode continuous wavelength tuning with threshold current density as low as 550 A/cm2. By reverse biasing the laser, we can obtain a tunable resonant cavity photodetector with simulated linewidth less than 2 nm. Narrow linewidth tunable photodetectors are particularly useful in extending the wavelength separation between WDM channels beyond those offered by other techniques
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser tuning; micromachining; micromechanical devices; optical wavelength conversion; photodetectors; quantum well lasers; surface emitting lasers; wavelength division multiplexing; 293 K; InGaAs; micromachined tunable VCSEL; narrow linewidth tunable photodetectors; reverse biasing; single mode continuous wavelength tuning; threshold current density; vertical cavity lasers; wavelength division multiplexing; wavelength selective tunable photodetectors; wavelength separation; Erbium-doped fiber lasers; Laser modes; Laser tuning; Optical interconnections; Photodetectors; Resonance; Semiconductor laser arrays; Tunable circuits and devices; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
Type :
conf
DOI :
10.1109/ISCS.1998.711739
Filename :
711739
Link To Document :
بازگشت