DocumentCode :
2751624
Title :
Investigation of the efficiency-droop mechanism in a GaN based blue light-emitting diodes using a very-fast electrical-optical pump-probe technique
Author :
Shi, J. -W ; Lin, Che-Wei ; Chen, Wei ; Lee, M.L. ; Sheu, J.-K.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
709
Lastpage :
710
Abstract :
Electrical-optical pump-probe is used to investigate GaN blue LEDs under different temperatures. Measurement result indicates that under moderate current density (~200A/cm2) piezoelectric field induced carrier-escaping cannot be neglected and is responsible for the observed efficiency-droop.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; light emitting diodes; wide band gap semiconductors; LED; blue light-emitting diodes; efficiency-droop mechanism; electrical-optical pump-probe; piezoelectric field; Current density; Gallium nitride; Light emitting diodes; Power generation; Power measurement; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110747
Filename :
6110747
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2751624
بازگشت