Title :
Characterization of GaAs/AlGaAs mid-infrared emitters
Author :
Hvozdara, L. ; Heyman, J.N. ; Strasser, G. ; Unterrainer, K. ; Kruck, P. ; Helm, M. ; Gornik, E.
Author_Institution :
Inst. fur Festkoperelektronik, Tech. Univ. Wien, Austria
Abstract :
We report the design, growth, and characterization of mid-infrared emitters based on the GaAs/AlGaAs material system. The structures are unipolar intersubband emitters. Photocurrent, transmission and integral emission power measurements are performed. We also report the temperature dependence of the photocurrent and current voltage characteristics of two emitters
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photoconductivity; quantum well lasers; semiconductor epitaxial layers; GaAs-AlGaAs; current voltage characteristics; emission power; mid-infrared emitters; photocurrent; quantum wells; temperature dependence; unipolar intersubband emitters; Distributed feedback devices; Electrons; Gallium arsenide; Laser feedback; Laser transitions; Optical materials; Photoconductivity; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711740
