Title :
Multi-staged, InAsSb mid-infrared lasers and light-emitting diodes, grown by MOCVD
Author :
Kurtz, S.R. ; Allerman, A.A. ; Biefeld, R.M. ; Baucom, K.C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We describe the first mid-infrared (4 μm) lasers and LEDs utilizing strained InAsSb, multi-stage (or “cascaded”) active regions. An (n)InAs/(p)GaAsSb semimetal layer is incorporated into each stage as an internal electron-hole source. To date, 2-stage LEDs and 2-stage lasers have been demonstrated. Our multi-stage devices were grown by MOCVD
Keywords :
III-V semiconductors; MOCVD; indium compounds; light emitting diodes; quantum well lasers; semiconductor growth; (n)InAs/(p)GaAsSb semimetal layer; 4 mum; InAs-GaAsSb; InAsSb; MOCVD; cascaded active regions; internal electron-hole source; light-emitting diodes; multi-staged mid-infrared lasers; strained layers; Chemical lasers; Electrons; Light emitting diodes; MOCVD; Metallic superlattices; Optical materials; Quantum cascade lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711741
