Title :
GaP-AlxGa1-xP waveguide Raman lasers and amplifiers for optical communication
Author :
Suto, K. ; Kimura, T. ; Saito, T. ; Watanabe, A. ; Nishizawa, J.
Author_Institution :
Tohoku Univ., Sendai, Japan
Abstract :
GaP-AlxGa1-xP tapered waveguide semiconductor Raman lasers have been cw-operated using a Ti sapphire pump laser. The first Stokes output power is perfectly saturated and the intensity noise level reduces over 30 dB. Also they are operated under pumping by a laser diode. Also, the semiconductor Raman amplifier characteristics are shown to be suitable for light frequency discrimination in future THz band as well as WDM optical communication systems
Keywords :
III-V semiconductors; Raman lasers; aluminium compounds; gallium compounds; laser noise; optical pumping; optical transmitters; semiconductor lasers; waveguide lasers; wavelength division multiplexing; GaP-AlGaP; Stokes output power; Ti sapphire pump laser; WDM; intensity noise level; laser diode pumping; light frequency discrimination; semiconductor Raman amplifier; tapered waveguide semiconductor Raman lasers; Laser excitation; Laser noise; Optical waveguides; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Waveguide discontinuities; Waveguide lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711742
