• DocumentCode
    2751656
  • Title

    GaP-AlxGa1-xP waveguide Raman lasers and amplifiers for optical communication

  • Author

    Suto, K. ; Kimura, T. ; Saito, T. ; Watanabe, A. ; Nishizawa, J.

  • Author_Institution
    Tohoku Univ., Sendai, Japan
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    573
  • Lastpage
    576
  • Abstract
    GaP-AlxGa1-xP tapered waveguide semiconductor Raman lasers have been cw-operated using a Ti sapphire pump laser. The first Stokes output power is perfectly saturated and the intensity noise level reduces over 30 dB. Also they are operated under pumping by a laser diode. Also, the semiconductor Raman amplifier characteristics are shown to be suitable for light frequency discrimination in future THz band as well as WDM optical communication systems
  • Keywords
    III-V semiconductors; Raman lasers; aluminium compounds; gallium compounds; laser noise; optical pumping; optical transmitters; semiconductor lasers; waveguide lasers; wavelength division multiplexing; GaP-AlGaP; Stokes output power; Ti sapphire pump laser; WDM; intensity noise level; laser diode pumping; light frequency discrimination; semiconductor Raman amplifier; tapered waveguide semiconductor Raman lasers; Laser excitation; Laser noise; Optical waveguides; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Waveguide discontinuities; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711742
  • Filename
    711742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2751656