Title :
Towards the modeling of gaas based 850 nm VCSEL with oxide confinement
Author :
Mitani, S.M. ; Alias, M.S. ; Yahya, M.R. ; Mat, A.F.A.
Author_Institution :
UPM, Serdang
fDate :
Oct. 30 2007-Nov. 2 2007
Abstract :
The paper presents the structure for an oxide confined vertical cavity surface- emitting laser (VCSEL) and the simulation results for its operation at 850 nm of the electromagnetic spectrum. In this kind of VCSEL, low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced, and it is found that the device finally yields good operational efficiency. Illustrations are made of a few features for the proposed device that govern it operational characteristics.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; surface emitting lasers; GaAs; VCSEL; good operational efficiency; oxide confinement; vertical cavity surface- emitting laser; wavelength 850 nm; Carrier confinement; Distributed Bragg reflectors; Doping; Electromagnetic modeling; Electromagnetic spectrum; Gallium arsenide; Optical waveguides; Photonic band gap; Quantum well devices; Vertical cavity surface emitting lasers;
Conference_Titel :
TENCON 2007 - 2007 IEEE Region 10 Conference
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1272-3
Electronic_ISBN :
978-1-4244-1272-3
DOI :
10.1109/TENCON.2007.4428872
