Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors

Author

Kolagunta, V.R. ; Janes, D.B. ; Melloch, M.R. ; Youtsey, C.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

597

Lastpage

600

Abstract

In this paper we present gating effects in double well resonant tunneling heterostructures with sub-micron minimum feature widths. Resonant tunneling through one dimensional states in the wells is observed as the device approaches pinch-off at temperatures as high as 77 K. This is the first clear demonstration of resonant tunneling through such laterally confined one-dimensional sub-bands at 77 K

Keywords

interface states; resonant tunnelling transistors; 77 K; AlGaAs; GaAs; double-well sidewall gated resonant tunneling transistors; gating effects; laterally confined one-dimensional sub-bands; one dimensional states; pinch-off; quasi one-dimensional confinement; resonant tunneling heterostructures; sub-micron minimum feature widths; Diodes; Energy states; Frequency; Gallium arsenide; Logic devices; Oscillators; Postal services; Resonant tunneling devices; Switching circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711748

Filename

711748

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2751742