Design consideration of multi-band RF CMOS filter based on active inductors

Author

Zhiqiang, Gao ; Honglin, Xu ; Zhongzhao, Zhang ; Jinbao, Lan

Author_Institution

Microelectron. Center, HIT, Harbin, China

fYear

2010

fDate

July 28 2010-Aug. 1 2010

Firstpage

341

Lastpage

344

Abstract

In this paper, topology of gyrator-C active inductors are briefly reviewed. A novel structure of multi-band RF active inductor using transistors is presented. Issues of the active inductor related to stability, Q-enhancement principle, and noise are considered. The design of the multi-band Q-enhancement RF filter with 0.18um CMOS process is achieved based on the active inductors. Simulated results show the filter centered at 2.48GHz with about 84MHz bandwidth (3-dB) is tunable in frequency from about 2.19GHz to 4.14GHz, and it exhibits -6.1dBm input third-order intercept point at 2.48GHz with about 80MHz bandwidth while the DC power consumes only 3.9mW.

Keywords

CMOS analogue integrated circuits; UHF filters; UHF transistors; band-pass filters; electron device noise; gyrators; inductors; integrated circuit design; DC power consumes; Q-enhancement principle; active inductors; gyrator-C active inductor topology; multiband RF CMOS filter; power 3.9 mW; size 0.18 mum; transistors; Active inductors; Band pass filters; Circuit stability; Noise; Radio frequency; Stability analysis; active inductor; gyrator; multi-band CMOS filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4244-5511-9

Type

conf

DOI

10.1109/RCSLPLT.2010.5615308

Filename

5615308