DocumentCode
2751980
Title
160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap
Author
Hou, Lianping ; Haji, Mohsin ; Bryce, A. Catrina ; Marsh, John H.
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
751
Lastpage
752
Abstract
Monolithic ~1.55μm colliding-pulse mode-locked AlGaInAs/InP lasers with 3 and 5 quantum wells are compared. The 3 well device emitted pulses at 162GHz, with a width of 0.98ps, energy of 0.16pJ and time-bandwidth product of 0.47.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mode locking; quantum well lasers; AlGaInAs-InP; energy 0.16 pJ; frequency 160 GHz; frequency 162 GHz; monolithic colliding-pulse mode-locked lasers; optical overlap; quantum wells; time 0.98 ps; wavelength 1.55 mum; well device; Cavity resonators; Indium phosphide; Laser mode locking; Optical device fabrication; Optical refraction; Optical variables control; Quantum well lasers; AlGaInAs; Mode locked laser; optical communication systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110768
Filename
6110768
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