Title :
160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap
Author :
Hou, Lianping ; Haji, Mohsin ; Bryce, A. Catrina ; Marsh, John H.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Monolithic ~1.55μm colliding-pulse mode-locked AlGaInAs/InP lasers with 3 and 5 quantum wells are compared. The 3 well device emitted pulses at 162GHz, with a width of 0.98ps, energy of 0.16pJ and time-bandwidth product of 0.47.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mode locking; quantum well lasers; AlGaInAs-InP; energy 0.16 pJ; frequency 160 GHz; frequency 162 GHz; monolithic colliding-pulse mode-locked lasers; optical overlap; quantum wells; time 0.98 ps; wavelength 1.55 mum; well device; Cavity resonators; Indium phosphide; Laser mode locking; Optical device fabrication; Optical refraction; Optical variables control; Quantum well lasers; AlGaInAs; Mode locked laser; optical communication systems;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110768
