Title :
Engineered substrates: The foundation to meet current and future RF requirements
Author :
Le Meil, Jean-Marc ; Aspar, Bernard ; Desbonnets, Eric ; Raskin, Jean-Pierre
Author_Institution :
Soitec, Bernin, France
Abstract :
The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec and UCL explain the value of using RF-SOI substrates and more especially the new generation of Soitec widely adopted eSI™ (enhanced Signal Integrity) substrate to achieve the RF IC performance requested to address the LTE Advanced smart phone market.
Keywords :
Long Term Evolution; radiofrequency integrated circuits; silicon-on-insulator; LTE; RF-SOI substrates; radio-frequency IC; wireless data bandwidth; Conductivity; Noise; Performance evaluation; Radio frequency; Silicon; Silicon-on-insulator; Substrates; LTE; Silicon-on-Insulator (SOI); high frequency; high resistivity Si substrate; trap-rich layer; wireless applications;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117546