DocumentCode
2752041
Title
High peak power (550 mW) 40 GHz mode-locked DBR lasers with integrated optical amplifiers
Author
Akbar, Jehan ; Hou, Lianping ; Haji, Mohsin ; Strain, Michael J. ; Stolarz, Piotr M. ; Marsh, John H. ; Bryce, A. Catrina ; Kelly, Anthony E.
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
755
Lastpage
756
Abstract
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4 ps and a peak power over 550 mW.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser mode locking; semiconductor optical amplifiers; AlGaInAs-InP; distributed Bragg reflector lasers; frequency 40 GHz; mode-locked DBR lasers; power 550 mW; semiconductor optical amplifiers; time 4 ps; wavelength 1.55 mum; Distributed Bragg reflectors; Laser mode locking; Optical device fabrication; Optical reflection; Power generation; Semiconductor optical amplifiers; mode-locked laser diode; semiconductor laser; semiconductor optical amplifier; surface etched distributed Bragg reflector;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110770
Filename
6110770
Link To Document