DocumentCode
2752058
Title
Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser
Author
Tandoi, G. ; Seunarine, K. ; Ironside, C.N. ; Marsh, J.H. ; Bryce, A.C.
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
757
Lastpage
758
Abstract
We present a monolithic passively mode-locked 795nm GaAs/AlGaAs quantum well laser with enlarged vertical mode profile and a low duty-cycle cavity design, emitting 710fs long pulses at a peak power of 9.8W per facet. Semiconductor laser, mode-locked laser, coherent population trapping.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; laser cavity resonators; laser mode locking; quantum well lasers; GaAs-AlGaAs; GaAs/AlGaAs laser; coherent population trapping; enlarged vertical mode profile; low duty-cycle cavity; monolithic passively mode locked laser; quantum well laser; semiconductor laser; sub-picosecond peak power; time 710 ps; wavelength 795 nm; Current measurement; Laser mode locking; Masers; Optical pulses; Optical waveguides; Power lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110771
Filename
6110771
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