Comprehensive simulation of quantum well lasers

Author

Hybertsen, M.S. ; Alam, M.A. ; Smith, R.K. ; Baraff, G.A. ; Pinto, M.R.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

625

Lastpage

630

Abstract

We demonstrate a simulation tool which treats a full two dimensional cross section of a semiconductor laser diode with multiple quantum wells in the active region. The free carrier transport, the bound quantum well populations, the capture of carriers into the quantum wells, the gain and spontaneous emission, the transverse optical mode and the photon mode population are all treated in a fully coupled and self-consistent solution for each bias of the laser diode. The simulations are illustrated for an EMBH laser structure with seven quantum wells in the active region

Keywords

SCF calculations; interface states; laser theory; quantum well lasers; semiconductor device models; semiconductor superlattices; spontaneous emission; EMBH laser structure; active region; bound quantum well populations; carrier capture; free carrier transport; fully coupled self consistent solution; gain; multiple quantum wells; photon mode population; quantum well lasers; semiconductor laser diode; simulation; simulation tool; spontaneous emission; transverse optical mode; two dimensional cross section; Carrier confinement; Charge carrier processes; Diode lasers; Electron optics; Laser modes; Optical devices; Optical refraction; Optical variables control; Quantum well lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711755

Filename

711755