Title :
Colliding-pulse mode-locked AlGaInAs laser operating at 20 GHz with narrow RF linewidth
Author :
Hou, Lianping ; Haji, Mohsin ; Akbar, Jehan ; Bryce, A. Catrina ; Marsh, John H.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
A novel 20 GHz 1.55 μm passively colliding-pulse mode-locked AlGaInAs/InP laser was demonstrated with a small RF linewidth (10 kHz), low timing jitter of 218 fs (4-80 MHz) and low divergence angle (14.7° × 27.3°).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mode locking; semiconductor lasers; timing jitter; AlGaInAs; RF linewidth; colliding-pulse mode-locked laser; divergence angle; frequency 20 GHz; frequency 4 MHz to 80 MHz; timing jitter; wavelength 1.55 mum; Laser mode locking; Optical device fabrication; Optical pulses; Radio frequency; Semiconductor lasers; Timing jitter; Waveguide lasers; Mode locked laser; radio frequency (RF) linewidth; timing jitter;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110772
