Title :
200mW GaN-based superluminescent diode with a novel waveguide structure
Author :
Ohno, Hiroshi ; Orita, Kenji ; Kawaguchi, Masao ; Yamanaka, Kazuhiko ; Takigawa, Shinichi
Author_Institution :
Semicond. Device Res. Center, Panasonic Corp., Nagaokakyo, Japan
Abstract :
High power operation of GaN-based superluminescent diodes is demonstrated with the emission wavelength of 405nm. Reducing the reflectivity and the optical density at the front facet by the waveguide structure enables high output power of 200mW.
Keywords :
III-V semiconductors; gallium compounds; optical waveguides; superluminescent diodes; wide band gap semiconductors; GaN; high power operation; optical density; power 200 mW; reflectivity; superluminescent diode; waveguide structure; wavelength 405 nm; Electrodes; Optical reflection; Optical waveguides; Power generation; Reflectivity; Stimulated emission; Superluminescent diodes;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110782
