DocumentCode
275257
Title
Voltage drops effects in bipolar transistor PWM inverters
Author
Boglietti, A. ; Ferraris, P. ; Lazzari, M. ; Profumo, F.F. ; Villata, F.
Author_Institution
Politecnico di Torino, Italy
fYear
1990
fDate
17-19 Jul 1990
Firstpage
104
Lastpage
109
Abstract
Pulse width modulation (PWM) control applied to bipolar junction transistor (BJT) voltage source inverter (VSI) is the most used solution for adjustable speed drives in the power range up to 100 kW. Open loop control to make the V/f rated constant is generally used. However, the inverter output voltage is not purely sinusoidal and the distortion is due to a bunch of power devices features: lock-out time, power transistors and diodes forward voltage drop, transistor storage time and BJTs and diodes differential resistances. The authors present a complete inverter model and the inverter output voltage is calculated keeping into account the power devices nonidealities mentioned above. Simulation results for different carrier frequencies, inverter output frequencies, load characteristics and modulation index are presented. Finally, some experimental results for validating the method proposed are shown
Keywords
bipolar transistors; invertors; power transistors; pulse width modulation; 100 kW; adjustable speed drives; bipolar junction transistor; bipolar transistor PWM inverters; differential resistances; diodes forward voltage drop; load characteristics; modulation index; open loop control; transistor storage time; voltage source inverter;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, 1991., Fourth International Conference on
Conference_Location
London
Type
conf
Filename
114623
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