NEMO: general release of a new comprehensive quantum device simulator

Author

Blanks, Daniel K. ; Klimeck, Gerhard ; Lake, Roger ; Jovanovic, Dejan ; Bowen, R.Chris ; Fernando, Chenjing ; Frensley, William R. ; Leng, Manhua

Author_Institution

Raytheon TI Syst., Dallas TX, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

639

Lastpage

642

Abstract

Device simulations are essential to explore new device designs, optimize performance, and analyze the underlying physics. Nanoelectronic devices pose a new challenge in this area since conventional drift-diffusion simulators are not applicable, NEMO (NanoElectronic MOdeling) is a new quantum device simulator based on a non-equilibrium Green´s function formalism that simulates a wide variety of quantum devices, including RTDs, HEMTs, HBTs, superlattices, and Esaki diodes. Here we announce the general release of NEMO as a national resource freely available to the US scientific community. We present NEMO calculations for InGaAs/AlAs and GaAs/AlAs RTD devices

Keywords

Green´s function methods; III-V semiconductors; aluminium compounds; electronic engineering computing; gallium arsenide; indium compounds; nanotechnology; quantum interference devices; resonant tunnelling diodes; semiconductor device models; software packages; Esaki diodes; GaAs-AlAs; GaAs/AlAs RTD devices; HBTs; HEMTs; InGaAs-AlAs; InGaAs/AlAs RTD devices; NEMO; NEMO calculations; RTDs; device simulations; nanoelectronic devices; nanoelectronic modeling; nonequilibrium Greens function formalism; quantum device simulator; quantum devices; superlattices; Analytical models; Design optimization; Diodes; Green´s function methods; HEMTs; MODFETs; Nanoscale devices; Performance analysis; Physics; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711758

Filename

711758