Title :
Intensity modulation of sub-terahertz oscillating resonant tunneling diode by irradiation of 1.55-µm laser
Author :
Kaburaki, Shinji ; Suzuki, Safumi ; Asada, Masahiro
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Technol., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We demonstrated intensity modulation of sub-terahertz oscillating resonant tunneling diode having an InGaAs optical absorption layer by 1.55-μm laser irradiation. 3dB cut-off frequency was ~200 MHz which was consistent with a calculation including hole velocity.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; intensity modulation; laser beam effects; light absorption; resonant tunnelling diodes; InGaAs; InGaAs optical absorption layer; hole velocity; intensity modulation; laser irradiation; resonant tunneling diode; sub-terahertz oscillating diode; wavelength 1.55 mum; Absorption; Frequency modulation; Indium gallium arsenide; Oscillators; Power generation; Power lasers; Radiation effects;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110810
