Title :
A DC technique for determining GaAs MESFET thermal resistance
Author :
Estreich, Donald B.
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
Abstract :
A novel DC electrical method (DCEM) is described for measuring the thermal resistance of GaAs MESFETs using the temperature dependence of the gate metal resistivity. The method requires a DC current to be passed (end-to-end) through the gate stripe to monitor the average temperature of the channel. The DCEM can measure the average thermal resistance over the entire operating range of a Schottky-gate MESFET using only DC measuring instruments. An example is given showing the thermal resistance of an ion-implanted 0.5- mu m GaAs MESFET as a function of DC power dissipation.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; thermal resistance measurement; 0.5 micron; DC electrical method; DC power dissipation; GaAs; MESFET; Schottky gate; gate metal resistivity; measurement; temperature dependence; thermal resistance; Conductivity; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; MESFETs; Temperature dependence; Temperature measurement; Temperature sensors; Thermal resistance;
Conference_Titel :
Semiconductor Thermal and Temperature Measurement Symposium, 1989. SEMI-THERM V., Fifth Annual IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/STHERM.1989.76079
