Title :
Is IDDQ testing not applicable for deep submicron VLSI in year 2011?
Author :
Lu, Chih-Wen ; Su, Chauchin ; Lee, Chung Len ; Chen, Jwu-E
Author_Institution :
Dept. of Electr. Eng., Da Yeh Univ., Taiwan
Abstract :
In this work, IDDQ current for deep submicron VLSI in year 2011 is estimated with a statistical approach according to the International Technology Roadmap for Semiconductors 1999 Edition considering process variations and different input vectors. The estimated results show that the standard deviation of the IDDQ current is proportional to the square root of the circuit size and the IDDQ currents of the defect-free and the defective devices, which are of the size up to 1×107 gates, are still differentiable under the condition of random process deviations and input vectors. Two new IDDQ testing schemes, which detect the defective current based on the two separate IDDQ distributions, are proposed. From the study, it is concluded that IDDQ testing is still applicable for the deep submicron VLSI for the next ten years
Keywords :
CMOS integrated circuits; VLSI; integrated circuit testing; leakage currents; statistical analysis; IDDQ current estimation; IDDQ distributions; IDDQ testing; circuit size; deep submicron VLSI; input vectors; random process deviations; standard deviation; statistical approach; Circuit faults; Circuit testing; Current measurement; Fault detection; Leakage current; MOSFETs; Random processes; Semiconductor device measurement; Subthreshold current; Very large scale integration;
Conference_Titel :
Test Symposium, 2000. (ATS 2000). Proceedings of the Ninth Asian
Conference_Location :
Taipei
Print_ISBN :
0-7695-0887-1
DOI :
10.1109/ATS.2000.893646
