Title :
A high-speed IDDQ sensor implementation
Author :
Antonioli, Yann ; Inufushi, Tsuneo ; Nishikawa, Shigeki ; Kinoshita, Kozo
Author_Institution :
Test Eng. Center, Sharp Corp., Nara, Japan
Abstract :
This paper presents an effective IDDQ sensor design implemented using a 0.35 μm process. A straightforward feedback scheme minimizes the effect of process variations. Independent structures permit one to monitor the basic characteristics of the IDDQ sensor, i.e., resolution and speed, and to carry out a 20k-gate floppy-disk controller IDDQ test separately. Simulation and test results show accuracy better than ±10 μA at 50 MHz in a 1 mA IDDQ measurement range
Keywords :
CMOS digital integrated circuits; circuit feedback; electric current measurement; electric sensing devices; integrated circuit testing; 0.35 micron; 50 MHz; BICS; built-in sensor; current sensor; feedback scheme; floppy-disk controller IDDQ test; high-speed IDDQ sensor implementation; submicron CMOS process; Circuit faults; Circuit testing; Clocks; Monitoring; Power supplies; Pulse measurements; Sensor phenomena and characterization; Signal resolution; Velocity measurement; Voltage;
Conference_Titel :
Test Symposium, 2000. (ATS 2000). Proceedings of the Ninth Asian
Conference_Location :
Taipei
Print_ISBN :
0-7695-0887-1
DOI :
10.1109/ATS.2000.893649
