DocumentCode :
2753129
Title :
Theoretical study of vanadium oxide components effect on phase transition temperature
Author :
Zhi-gang, Fan ; Xue-song, Tian ; Jian-feng, Sun ; Qi, Wang
Author_Institution :
Res. Center of Space Opt. Eng., Harbin Inst. of Technol., Harbin, China
fYear :
2010
fDate :
July 28 2010-Aug. 1 2010
Firstpage :
170
Lastpage :
173
Abstract :
Vanadium dioxide is a kind of thermotropic phase transition material with the nearest phase transition temperature to the room temperature, which can be used in the laser protection area and Uncooled Microbolometer. VO2 is prepared on ZnSe by magnetron sputtering method, and the optical character changing of different components vanadium oxide thin films are tested by Nicolet 8700 IR spectrometer. Some phenomena are observed. Because different components have different phase transition character, their phase transition temperatures are all lower than vanadium dioxide´s 68°C. The energy band structure of vanadium oxide molecule is calculated by Material Studio, and the theoretic calculation explains how the components affect the phase transition temperature. Control the components of vanadium oxide by annealing, then adjust the phase transition temperature, and a new technique which changing the phase transition temperature without doping was found.
Keywords :
annealing; band structure; infrared spectra; solid-state phase transformations; sputter deposition; thin films; vanadium compounds; IR spectrometry; Material Studio; VO2; ZnSe; annealing; energy band structure; laser protection; magnetron sputtering; optical property; phase transition temperatures; temperature 293 K to 298 K; thermotropic phase transition material; uncooled microbolometer; vanadium oxide thin films; Chemicals; Crystals; Optical films; Temperature control; Temperature measurement; Phase transition character; Thin film technique; Vanadium dioxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5511-9
Type :
conf
DOI :
10.1109/RCSLPLT.2010.5615363
Filename :
5615363
Link To Document :
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