Title :
Two-dimensional device simulation for PHEMT material and process control
Author :
Pao, Y.C. ; Harris, J.S., Jr.
Author_Institution :
Litton Solid State Div., Santa Clara, CA, USA
Abstract :
Profound characteristic changes of quarter micron PHEMT as functions of material and process related parameters have been examined based on a novel two-dimensional PISCES heterojunction simulation. The construction of the PHEMT input structure is based on the physical values obtained from experimental measurements. It has been found that gate recess spacing, surface states and buffer are the most influential parameters, other than gate length, 2DEG sheet charge density and saturation velocity, which affect the PHEMT performance
Keywords :
carrier density; high electron mobility transistors; semiconductor device models; semiconductor process modelling; surface states; two-dimensional electron gas; 2DEG sheet charge density; PHEMT input structure; PHEMT material; buffer; gate length; gate recess spacing; process control; pseudomorphic HEMT; quarter micron PHEMT; saturation velocity; surface states; two-dimensional PISCES heterojunction simulation; two-dimensional device simulation; Electric breakdown; Electron mobility; HEMTs; Heterojunctions; Impact ionization; MODFETs; PHEMTs; Poisson equations; Process control; Solid state circuits;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711760
