DocumentCode :
27532
Title :
Hybrid Fabrication of Highly Rectifying 
- 
Homojunction Based on Nanostructured TiO2
Author :
Hazra, A. ; Chattopadhyay, P.P. ; Bhattacharyya, Partha
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Indian Inst. of Eng. Sci. & Technol. at Shibpur, Shibpur, India
Volume :
36
Issue :
5
fYear :
2015
fDate :
May-15
Firstpage :
505
Lastpage :
507
Abstract :
Present report concerns fabrication of nanostructured TiO2-based p-n homojunction, by the hybrid technique involving deposition of sol-gel grown not intentionally doped p-type TiO2 nanoparticle layer over the electrochemically grown aligned, n-type TiO2 nanotube array. The Au/p-TiO2/n-TiO2 nanotube/Ti device was found to offer the ideality factor and the cut-in voltage of ~4 and ~1.2 V, respectively, in the temperature range of 30°C-80°C. The structural advantages of TiO2 nanotubes, owing to the large junction area, eventually offered attractive rectifying behavior (~103 orders) of the fabricated junction.
Keywords :
gold; nanofabrication; nanoparticles; p-n junctions; rectification; semiconductor growth; semiconductor nanotubes; sol-gel processing; titanium; titanium compounds; Au-TiO2-TiO2-Ti; cut-in voltage; doped p-type TiO2 nanoparticle; electrochemically grown aligned nanotube array; highly rectifying p-n homojunction; ideality factor; n-type TiO2 nanotube array; nanostructured TiO2-based p-n homojunction; sol-gel deposition; temperature 30 degC to 80 degC; Arrays; Gold; Nanoscale devices; P-n junctions; Temperature distribution; $p$ - $n$ homojunction; Sol-gel $p$ -TiO2; Sol-gel p-TiO2; electrochemical $n$ -TiO2 nanotubes; electrochemical n-TiO2 nanotubes; high rectification; low ideality factor; p-n homojunction;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2416752
Filename :
7086026
Link To Document :
