DocumentCode :
2753232
Title :
Study on the distribution of trap levels in PI by OPO laser
Author :
He, Lijuan ; Wang, Dongni ; Cao, Jinglei ; Zhao, Lei ; Wang, Xuan ; Lei, Qingquan
Author_Institution :
Harbin Univ. of Sci. & Technol., Harbin, China
fYear :
2010
fDate :
July 28 2010-Aug. 1 2010
Firstpage :
167
Lastpage :
169
Abstract :
In this paper, the photo-stimulated discharge (PSD) current spectra of polyimide (PI) are obtained by the optical parametric oscillator (OPO) laser to characterize the deep space charge traps in the dielectric materials. The result shows that the energy level of charge traps in the PI film is distributed in 3.10~4.10eV, and the main part concentrates in 3.35~3.85eV. These data can provide experimental basis for the further research and improvement on electrical properties of materials.
Keywords :
deep levels; dielectric thin films; optical parametric oscillators; polymer films; space charge; charge trap energy level; deep space charge traps; dielectric materials; electrical properties; optical parametric oscillator laser; photostimulated discharge current spectra; polyimide films; Current measurement; Discharges; Films; Laser excitation; Measurement by laser beam; Space charge; optical parametric oscillator; space charge; trap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5511-9
Type :
conf
DOI :
10.1109/RCSLPLT.2010.5615368
Filename :
5615368
Link To Document :
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