Analysis of the electrical characteristics of LDMOSFET under various temperature

In this paper, we have investigated the electrical characteristics of power LDMOSFETs having different gate lengths(2.1 mum -3 mum) in the temperature range of 100 K-500 K. The specific on-resistance and the off-state breakdown voltage increase with temperature. The result shows that the specific on- resistance increases exponentially with the exponent of 2.2 and, by contrast, the off-state breakdown voltage increases linearly with a slope of 100 mV/K (Drift region concentration of measured device: 2 times 10¹⁵ cm^-3). As a result, Ron/BV, known for a figure of merit of power device, increases with temperature.