DocumentCode :
2753604
Title :
The novel facet coating technology for 808nm semiconductor laser
Author :
Li, Zaijin ; Qin, Li ; Liu, Yun ; Wang, Lijun
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. &, Changchun, China
fYear :
2010
fDate :
July 28 2010-Aug. 1 2010
Firstpage :
106
Lastpage :
108
Abstract :
A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology, semiconductor laser are cleaved in the air, and the surface oxide layer is removed with a low energy ion source, flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet, and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer, and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A, and the device coated with Si layer is damaged when current is 5.5 A, the final failed device is coated with ZnSe layer. In conclusion, the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage, and increase the output power of semiconductor lasers.
Keywords :
II-VI semiconductors; impurities; mirrors; optical films; semiconductor lasers; wide band gap semiconductors; zinc compounds; ZnSe; catastrophic optical mirror damage; facet coating; impurity particle diffusion; low energy ion source; oxidative optical film; oxide film; semiconductor laser; size 20 nm; surface oxide layer; wavelength 808 nm; Coatings; Optical films; Power generation; Power lasers; Silicon; Surface emitting lasers; COMD; coated; facet; semiconductor laser;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5511-9
Type :
conf
DOI :
10.1109/RCSLPLT.2010.5615387
Filename :
5615387
Link To Document :
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