1.3µm InAs quantum dots grown on silicon substrate

Author

Li, Lin ; Zhang, Fan ; Guimard, Denis ; Nishioka, Masao ; Arakawa, Yasuhiko

Author_Institution

Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2010

fDate

July 28 2010-Aug. 1 2010

Firstpage

99

Lastpage

102

Abstract

The self-assembled InAs quantum dots (QDs) on Si substrate with high density (7.5×10¹⁰ cm^-2) were achieved using relatively lower growth temperature by low-pressure metal-organic chemical vapor deposition. The PL spectra exhibit 1.3μm emission from InAs quantum dots at room temperature. PL measurements at 77K, Full Width at Half-Maximum (FWHM) is about 60meV.

Keywords

III-V semiconductors; MOCVD; indium compounds; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum dots; FWHM; InAs; PL measurements; PL spectra; Si; full width at half-maximum; low-pressure metal-organic chemical vapor deposition; relatively lower growth temperature; self-assembled InAs quantum dots; silicon substrate; temperature 293 K to 298 K; temperature 77 K; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Quantum dots; Silicon; Substrates; Surface morphology; Temperature measurement; 1.3µm wavelength; InAs quantum dots; silicon substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4244-5511-9

Type

conf

DOI

10.1109/RCSLPLT.2010.5615390

Filename

5615390