DocumentCode
2753692
Title
First 102 nm ultra-widely tunable MEMS VCSEL based on InP
Author
Gruend, Tobias ; Gierl, Christian ; Grasse, Christian ; Zogal, Karolina ; Boehm, Gerhard ; Meyer, Ralf ; Amann, Markus-Christian ; Meissner, Peter
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
911
Lastpage
912
Abstract
We present the first tunable MEMS VCSEL at 1.55 μm with 102 nm continuous tuning, SMSRs beyond 40 dB and output powers exceeding 2 nW (fiber coupled) over the whole tuning range.
Keywords
III-V semiconductors; indium compounds; laser tuning; micromechanical devices; surface emitting lasers; InP; continuous tuning; power 2 nW; tuning range; ultra-widely tunable MEMS VCSEL; wavelength 1.55 mum; wavelength 102 nm; Epitaxial growth; Epitaxial layers; Heating; Junctions; Micromechanical devices; Stimulated emission; Tuning; InP; MEMS VCSEL; continuous tuning; electrically-pumped; short cavity; single mode;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110855
Filename
6110855
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