DocumentCode
2753719
Title
High performance 850nm VCSELs with surface relief
Author
Li, T. ; Hao, E.J.
Author_Institution
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear
2010
fDate
July 28 2010-Aug. 1 2010
Firstpage
103
Lastpage
105
Abstract
High performance 850nm VCSEL with surface-relief are fabricated. The maximum power of 10mW was achieved at injection current of 19mA for the device with 12μm oxide aperture. The electrical characteristics of the devices are investigated. In the meanwhile, a novel and extremely simple process for the oxide-confined VCSEL fabrication was described.
Keywords
laser modes; optical fabrication; surface emitting lasers; VCSEL; current 19 mA; electrical characteristics; fabrication process; high order mode suppression; power 10 mW; surface relief; wavelength 850 nm; Apertures; Fabrication; Surface resistance; Surface treatment; Vertical cavity surface emitting lasers; 850nm; VCSELs; oxide-confined; surface-relief;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location
Harbin
Print_ISBN
978-1-4244-5511-9
Type
conf
DOI
10.1109/RCSLPLT.2010.5615392
Filename
5615392
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