Optimal design for improving performance of VCSELs

Author

Hao, Yongqin ; Liu, Guojun ; Feng, Yuan ; Hou, Lifeng ; Yan, Changling ; Zhao, Yingjie ; Wang, Yuxia

Author_Institution

Nat. Key Lab. of High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2010

fDate

July 28 2010-Aug. 1 2010

Firstpage

93

Lastpage

95

Abstract

A new device structure is reported to improve performance of vertical cavity surface-emitting lasers (VCSELs). Namely many cylindrical holes (CH) or noncontiguous ring trench (NRT) are etched instead of the conventional ring trench (RT). The mesa with such new structure offers radial bridges for current injection, the connecting Ti-Au metal between ohmic contact and bonding pad does not have to cross the ring trench, and it would not cause the connecting metal broken. The 850nm VCSELs with CH have a light output power higher than 10 mW and have a maximum of 12.5 mW at 29.6 mA, 1.34 times as much as those with RT. And the 980nm VCSELs with NRT have a maximum light output power of 28.8 mW at 49.5 mA, 1.6 times as much as those with RT. In addition, these new structure VCSELs also show high-temperature operation characteristics.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; gold; laser cavity resonators; quantum well lasers; ring lasers; surface emitting lasers; titanium; GaAs-AlGaAs-GaAs; Ti-Au; VCSEL; current 29.6 mA; current 49.5 mA; current injection; etching; high-temperature operation characteristics; noncontiguous ring trench; ohmic contact; vertical cavity surface-emitting lasers; wavelength 850 nm; wavelength 980 nm; Cavity resonators; Laser beams; Power generation; Temperature; Vertical cavity surface emitting lasers; quantum well; ring trench(RT); semiconductor laser; vertical-cavity surface-emitting laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4244-5511-9

Type

conf

DOI

10.1109/RCSLPLT.2010.5615393

Filename

5615393