Title :
A semiconductor process for cointegration of BAW thin-film piezoelectrics with microwave BJTs
Author :
Weber, R.J. ; Burns, S.G. ; Braymen, S.D.
Author_Institution :
Microelectron, Res. Center, Iowa State Univ., Ames, IA, USA
Abstract :
A compatible process for the monolithic integration of the BAW (bulk acoustic wave) piezoelectric thin-film resonator with silicon BJTs (bipolar junction transistors) is presented. The process uses RIE (reactive ion etching) trench-isolated BJTs cointegrated with high-Q AlN resonators which do not use the p+ etch stop. Dielectrically assisted liftoff is used for AlN definition. The process is used for the design of a semicustom ASIC (application-specific integrated circuit) palette consisting of resonators, BJTs, resistors, and digitally weighted MOS capacitors. This ASIC palette is then used for the design of 1-GHz oscillators. To facilitate the use of SPICE and S-parameter techniques, resonator equivalent circuit elements are obtained using TOUCHSTONE optimization routines
Keywords :
MMIC; acoustic resonators; application specific integrated circuits; bipolar integrated circuits; crystal resonators; integrated circuit technology; microwave oscillators; sputter etching; 1 GHz; AlN resonators; MMIC; S-parameter techniques; SPICE; Si bipolar junction transistors; TOUCHSTONE optimization routines; bulk acoustic wave resonator; cointegration; dielectrically assisted liftoff; digitally weighted MOS capacitors; microwave HBT; monolithic integration; oscillator design; piezoelectric thin-film resonator; reactive ion etching; resonator equivalent circuit elements; semiconductor process; semicustom ASIC; Acoustic waves; Application specific integrated circuits; Dielectrics; Etching; Monolithic integrated circuits; Piezoelectric films; Resistors; Semiconductor thin films; Silicon; Thin film transistors;
Conference_Titel :
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location :
Honolulu, HI
DOI :
10.1109/ULTSYM.1990.171420
