Title :
Ultra-Shallow Junction Formation by Plasma Doping and Flash Lamp Annealing
Author :
Tsutsui, K. ; Sasaki, Y. ; Jin, C.-G. ; Sauddin, H. ; Majima, K. ; Fukagawa, Y. ; Aiba, I. ; Ito, H. ; Mizuno, B. ; Kakushima, K. ; Ahmet, P. ; Iwai, H.
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol.
Abstract :
Ultra-shallow P+/N junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance. The pre-amorphization by He plasma treatment (He-PA process) played an important role for the successful formation or these junctions. Electrical properties were analyzed by not only sheet resistance but also Hall measurements and junction leakage measurement
Keywords :
boron; incoherent light annealing; laser beam annealing; plasma immersion ion implantation; rapid thermal annealing; semiconductor doping; semiconductor junctions; silicon; Hall measurements; Si:B; activation annealing; electrical properties; flash lamp annealing; junction leakage measurement; laser annealing; plasma doping; plasma treatment; spike-RTA; ultra-shallow junction formation; Annealing; Boron; Doping; Electric resistance; Electric variables measurement; Electrical resistance measurement; Ion implantation; Lamps; Plasma immersion ion implantation; Plasma measurements;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.367980
