DocumentCode
27541
Title
Inside View
Author
Baldwin, Jennifer
Author_Institution
IET, Stevenage, UK
Volume
49
Issue
2
fYear
2013
fDate
January 17 2013
Firstpage
81
Lastpage
81
Abstract
Researchers from Virginia Polytechnic Institute and State University tell us more about their work on dopant diffusion in germanium.
Keywords
Fermi level; MOSFET; arsenic; boron; diffusion; elemental semiconductors; germanium; interstitials; p-n heterojunctions; phosphorus; semiconductor doping; vacancies (crystal); Fermi level; Ge:As; Ge:B; Ge:P; MOSFET; arsenic diffusion; dopant atom diffusion; doubly negatively charged vacancies; drain doping; electron-hole density; forming pairs; germanium; interstitial levels; lattice atoms; phosphorous diffusion; point defects; slow diffusion nature; source-drain doping; source-drain regions; substrate material; ultra-shallow p-n junctions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.4425
Filename
6420064
Link To Document