Title :
The Progress in Ultra Thin Gate Dielecgtric for System LSI Application
Author :
Yugami, J. ; Tsujikawa, S. ; Inoue, M. ; Mizutani, M. ; Hayashi, T. ; Nishida, Y. ; Umeda, H.
Author_Institution :
Process Technol. Dev. Div., RENESAS Technol. Corp., Hyogo
Abstract :
EOT reduction is a key challenge to keep the Moore´s law, especially in low power LSIs. Nice candidates of gate dielectric as alternative to conventional SiO2 are N-rich SiON and high-K. However, in each case, we truly need tuning tools of Vth in the system LSI applications. F incorporation technique should be effective in Vth tuning with both N-rich SiON and high-K. Moreover, F incorporation is promising from reliability aspect
Keywords :
CMOS integrated circuits; fluorine; high-k dielectric thin films; large scale integration; silicon compounds; N-rich SiON; SiON:F; high-K dielectric; system LSI application; ultra thin gate dielectric; Dielectric devices; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Interface states; Large scale integration; MOSFETs; Niobium compounds; Nitrogen; Titanium compounds;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.367982
