Title :
Flash Lamp Annealing Latest Technology for 45nm device and Future devices
Author_Institution :
Dept. of FLA Eng., Dainippon Screen Mfg. Co., Ltd., Kyoto
Abstract :
FLA (flash lamp annealing) is used in 65nm generation devices manufacturing. For next 45nm and future generation devices, we have picked up 3 key subjects related to milli-second annealing: process controllability, S/D (source drain) activation, silicidation. No need to say, process controllability is very important for device manufacturing. And process requirement for S/D activation and silicidation controllability is becoming more and more severe. Under evaluation of these subjects, it became clear that FLA technology is still a hopeful candidate for 45nm device and future
Keywords :
incoherent light annealing; semiconductor technology; 45 nm; 45nm device; 65nm generation; S/D activation; device manufacturing; flash lamp annealing; process controllability; silicidation controllability; Absorption; Annealing; Controllability; Heating; Lamps; Manufacturing processes; Semiconductor device modeling; Silicidation; Temperature; Thermal conductivity;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.367983