Title :
Study on high quality InGaAsSb/AlGaAsSb MQWs grown by molecular beam epitaxy
Author :
Li, Zhanguo ; Liu, Guojun ; You, Minghui ; Lin Li ; Li, Mei ; Gao, Xin ; Zou, Yong Gang ; Wang, Xiaohua ; Bo, Baoxue
Author_Institution :
Nat. Key Lab. on High Power, Changchun Univ. of Sci. & Technol., Changchun, China
fDate :
July 28 2010-Aug. 1 2010
Abstract :
In this work, the Type I InGaAsSb/AlGaAsSb multiple-quantum-wells (MQWs) has been grown by molecular beam epitaxy (MBE). The comprised five InGaAsSb quantum wells are embedded in AlGaAsSb barriers, the barriers/QWs periodicity matches to GaSb substrates, and satellite peaks indicate a good crystalline quality. The central peak emission wavelength is around 2.0 μm at room temperature by photoluminescence (PL), with a full-width at half-maximum (FWHM) of 39 meV.
Keywords :
III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; semiconductor growth; semiconductor quantum wells; InGaAsSb-AlGaAsSb; diffusion barriers; full-width at half-maximum; molecular beam epitaxy; multiple-quantum-wells; peak emission wavelength; periodicity; photoluminescence; temperature 293 K to 298 K; Lattices; Molecular beam epitaxial growth; Quantum well devices; Scanning electron microscopy; Substrates; Temperature measurement; X-ray scattering; MBE; MQWs; PL;
Conference_Titel :
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5511-9
DOI :
10.1109/RCSLPLT.2010.5615414
