Title :
Mechanical Stress in Silicon Based Materials: Evolution Upon Annealing and Impact on Devices Performances
Author_Institution :
STMicroelectronics, Crolles
Abstract :
An overview of the mechanical stress mechanisms observed within as deposited silicon oxide and nitride films deposited by the different techniques used for the CMOS transistors integration is presented in this paper. The evolution of the stress along the integration flow is described, with emphasize in the annealing steps. The impact of the film stress on the device is finally discussed especially in the case of integration of the shallow trench insulators and of the stress memorization technique
Keywords :
CMOS integrated circuits; annealing; dielectric materials; mechanical properties; silicon; stress effects; CMOS transistors integration; Si; annealing; devices performances; film stress impact; integration flow; mechanical stress; shallow trench insulators; silicon based materials; stress evolution; stress memorization technique; CMOS technology; Chemical vapor deposition; Dielectric materials; Mechanical factors; Plasma applications; Plasma temperature; Rapid thermal annealing; Semiconductor films; Silicon; Thermal stresses;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.367987
