DocumentCode
2754262
Title
Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering
Author
Harima, Hiroshi
Author_Institution
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol.
fYear
2006
fDate
10-13 Oct. 2006
Firstpage
117
Lastpage
120
Abstract
Raman scattering is a very powerful tool for micro- and nano-metric scale characterization of precise device manufacturing process in nondestructive and noncontact way. As an example, this paper describes interface interactions between metallic electrodes and Si characterized by Raman scattering
Keywords
MOSFET; Raman spectra; semiconductor device measurement; semiconductor-metal boundaries; Raman scattering; Si; device manufacturing process; interface interactions; metal-semiconductor interface; metallic electrodes; micrometric scale characterization; nanometric scale characterization; nondestructive characterization; Annealing; Chemical elements; Conductivity; Contact resistance; Magnetic materials; Nickel; Raman scattering; Semiconductor-metal interfaces; Silicides; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location
Kyoto
Print_ISBN
1-4244-0648-X
Electronic_ISBN
1-4244-0649-8
Type
conf
DOI
10.1109/RTP.2006.367990
Filename
4223117
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