Title :
NBTI Immune First Plasma Nitridation SiON with Multiple Single-Wafer Tools for 45nm node Gate Dielectrics
Author :
Tanaka, M. ; Koyama, Shinji ; Hasegawa, E. ; Olsen, C. ; Shishiguchi, S. ; Hane, M.
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Kanagawa
Abstract :
Nitrogen-rich and thin SiON gate dielectrics process using first plasma nitridation approach has been examined for 45nm-node CMOS application. This new process provides Tinv 1.8 nm with almost no degradation of the gm and no shift of Vth, and especially exhibits the higher immunity of the negative bias temperature instability (NBTI) even though the interfacial nitrogen concentration was observed to be higher than that of the conventional SiON process
Keywords :
CMOS integrated circuits; dielectric materials; nanotechnology; nitridation; silicon compounds; 45 nm; CMOS application; NBTI immune; SiON; gate dielectrics; interfacial nitrogen concentration; multiple single-wafer tools; negative bias temperature instability; plasma nitridation; CMOS process; Dielectrics; National electric code; Niobium compounds; Nitrogen; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Titanium compounds;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.367992
