RTP Diffusion and Junction Formation in Si and GaAs

Author

Shishiyanu, Sergiu

Author_Institution

Dept. of Microelectron. & Semicond. Devices, Moldova Tech. Univ., Chisinau

fYear

2006

fDate

10-13 Oct. 2006

Firstpage

199

Lastpage

204

Abstract

The investigation results of the RTP enhanced diffusion of P in Si and Zn in GaAs, the mechanism, models and the role of quantum effects are presented in this paper. Shallow and ultra-shallow p⁺-n, n^--p junctions have been obtained and analyzed. The experimental concentration profiles were simulated based on the dissociative diffusion mechanism. The diffusion coefficients and activation energies of the RTP enhanced diffusion and conventional furnace annealing was analyzed. The activation energy of RTP diffusion is lower than the conventional furnace diffusion and diffusion coefficient is higher by 1-3 order of magnitude. The p-n junctions with depth of 0.02 - 0.4 mum have been obtained by RTP for 0.1 - 3min diffusion time

Keywords

III-V semiconductors; diffusion; elemental semiconductors; gallium arsenide; p-n junctions; phosphorus; rapid thermal annealing; silicon; zinc; GaAs:Zn; RTP diffusion; Si:P; dissociative diffusion mechanism; junction formation; n-p junctions; p-n junctions; quantum effects; Annealing; Dielectric thin films; Furnaces; Gallium arsenide; Impurities; Microelectronics; P-n junctions; Rapid thermal processing; Semiconductor devices; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on

Conference_Location

Kyoto

Print_ISBN

1-4244-0648-X

Electronic_ISBN

1-4244-0649-8

Type

conf

DOI

10.1109/RTP.2006.368000

Filename

4223127